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| PJ13005 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION * * High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ) Characteristic Collector Emitter Voltage(VBE =1.5V) Collector Emitter Voltage(open base) Emitter Base Voltage(open collector) Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Ic Ic IB Pc Tj Tstg 3 6 2 75 150 -65 ~150 A A A W Device PJ13005CZ Operating Temperature -20+85 Package TO-220 VEBO 9 V Symbol VCEV VCEO Rating 700 400 Unit V V P in : 1. Base 2. Collector 3. Emitter ORDERING INFORMATION ELECTRICAL CHARACTERISTICS(Ta = 25 ) Characteristic *Collector Emitter Sustaining Voltage Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage Symbol VCEO(SUS) IEBO hFE VCE (sat) Test Condition Ic = 10mA, IB = 0 VEB =9V, Ic=0 VCE =5V, Ic =1A VCE =5V, Ic =2A Ic =1A, IB =0.2A Ic =2A, IB =0.5A Ic =4A, IB =1A *Base Emitter Saturation Voltage Turn On Time Storage Time Fall Time Pulse Test: PW300 S, Duty Cycle =1.5 % VBE (sat) t on ts tf Ic =1A, IB =0.2A Ic =2A, IB =0.5A VCC =125V, Ic =2A IB1 =-IB2 =0.4A Min 400 1 10 8 60 40 0.5 0.6 1.0 1.2 1.6 0.8 4 0.9 V V V V V S S S Typ Max Unit V mA 1-2 2002/01.rev.A PJ13005 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A |
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